Publications

Selected publications over the past several years and Google Scholar profile.

2026

• R. Corey White, Bora Kim, Yiteng Wang, Pankul Dhingra, Minjoo Larry Lee, “InP quantum dot lasers: from growth to devices (invited).” Optical Materials Express (2026) 16, 32-54.
• J. Chen, Y. Song, D. A. Montealegre, M. L. Lee, F. Xia, “Breaking the material-limited temperature coefficient of resistance via carrier feedback in a single transistor.” accepted, Nature Sensors (2026).

2025

• Yiteng Wang, Christopher Heidelberger, Jason Plant, Dave Kharas, Pankul Dhingra, Robert Kaufman, Xizheng Fang, Brian Li, Ryan Hool, John Dallesasse, Paul Juodawlkis, Cheryl Sorace-Agaskar, Minjoo Larry Lee, “Embedded growth of visible InP quantum dot lasers in silicon nitride photonic integrated circuits.” Optica (2025) 12, 1697-1701.
  • Press releases from HMNTL and from the Department of Materials Science and Engineering.
• García, Ashlee M., William J. Doyle, Yiteng Wang, Minjoo L. Lee, Daniel Wasserman, and Seth R. Bank. “High-Quality GaP Planar Coalescence over Embedded Dielectric Microstructures.” Crystal Growth & Design (2025).
• Stephanie Tomasulo and Minjoo Larry Lee, “Advances in wide-bandgap III-V solar cells.” Applied Physics Reviews (2025) 12, 031309. Editor’s Pick
• Raftery, E. M., D. Lee, B. J. Thompson, K. Chow, W. K. North, M. L. Lee, and K. D. Choquette. “Photopumped Buried Dielectric Photonic-Crystal Surface-Emitting Lasers.” IEEE Photonics Journal (2025) 17, 0600405.
• Bora Kim, Mijung Kim, Brian Li, Ryan D. Hool, and Minjoo Larry Lee. “Cryogenic GaAs laser power converters.” Solar Energy Materials and Solar Cells 281, 113321 (2025).
• Azzaya Khasbaatar, Alec M. Damron, Pravini S. Fernando, Jasmine S. Williams, Chenhui Zhu, Eliot H. Gann, Jong-Hoon Lee, Adrian Birge, Bora Kim, Sina Sabury, Minjoo L. Lee, John R. Reynolds, Ying Diao. “Lyotropic Liquid Crystal Mediated Assembly of Donor Polymers Enhances Efficiency and Stability of Blade-Coated Organic Solar Cells.” Advanced Materials 2414632 (2025).
• D. Quispe, B. Eng, M. Kim, B. J. Coppa, M. L. Lee, Z. C. Holman. “Evaluating the potential of polycrystalline Al_0.25Ga_0.75P and Al_0.9Ga_0.1As as hole contacts in silicon heterojunction solar cells” IEEE Journal of Photovoltaics 15(2):223-232 (2025).
• Brian Li, Yiteng Wang, Adrian Birge, Xizheng Fang, Bora Kim, and Minjoo Larry Lee. “AlGaAsP distributed Bragg reflectors for GaAsP/Si solar cells.” IEEE Journal of Photovoltaics 15(1):87-94 (2025).

2024

• Brian Li, Pankul Dhingra, Ryan D. Hool , Shizhao Fan, and Minjoo Larry Lee. “Effect of Threading Dislocations on GaInP Front-and Rear-Junction Solar Cells Grown on Si.” IEEE Journal of Photovoltaics 14(4):616-622 (2024).
• M. Kim, Y. Sun, and M. L. Lee. “Metamorphic and lattice-matched GaInP rear-heterojunction solar cells for improved performance at elevated temperatures.” IEEE Journal of Photovoltaics 14(4):610-615 (2024).

2023

• Brian Li, Yukun Sun, Ryan D. Hool, Minjoo Larry Lee. “Abrupt Te doping of GaInP grown by molecular beam epitaxy for solar cell applications.” J. Appl. Phys. 134, 065702 (2023).
• Kim, Mijung, Yukun Sun, Ryan D. Hool, and Minjoo Larry Lee. “Metamorphic front-and rear-junction 1.7 eV GaInP solar cells with high open-circuit voltage.” Solar Energy Materials and Solar Cells 259 112435 (2023).
• P. Dhingra, A. J. Muhowski, B. Li, Y. Sun, R. D. Hool, D. Wasserman, M. L. Lee, “Low-threshold visible InP quantum dot and InGaP quantum well lasers grown by molecular beam epitaxy.” J. Appl. Phys. 133, 103101 (2023).
  • Story about the paper on Semiconductor Today.
• D. Quispe, B. Eng, M. Kim, A. L. Onno, B. J. Coppa, Z. J. Yu, M. L. Lee, Z. C. Holman “Optical constants of polycrystalline Al_0.25Ga_0.75P and Al_0.9Ga_0.1As determined by variable-angle spectroscopic ellipsometry,” J. Appl. Phys. 134, 073104 (2023).
• S. Xu, S. Zhang, J. D. Kirch, H. Gao, Y. Wang, M. L. Lee, S. R. Tatavarti, D. Botez, L. J. Mawst. “8.1 µm-emitting InP-based quantum cascade laser grown on Si by metalorganic chemical vapor deposition.” Appl. Phys. Lett. 123 (3): 031110 (2023).
• Lee, Jong-Hoon, Azzaya Khasbaatar, Austin L. Jones, Changhyun Hwang, Mijung Kim, Joseph Strzalka, Eliot Gann, Minjoo L. Lee, John R. Reynolds, and Ying Diao. “Recycling the Energy of Indoor Light: Highly Efficient Organic Photovoltaics via a Ternary Strategy.” ACS Applied Polymer Materials 5, 4199 (2023).

2022

• S. Xu, S. Zhang, J. D. Kirch, S. Suri, N. Pokharel, H. Gao, H. Kim, P. Dhingra, M. L. Lee, D. Botez, and L. J. Mawst , “∼8.5 μm-emitting InP-based quantum cascade lasers grown on GaAs by metal-organic chemical vapor deposition.” Appl. Phys. Lett. 121, 171103 (2022)
• Y. Sun, S. Fan, D. Jung, R. D. Hool, B. D. Li,  M. A. Vaisman, M. L. Lee. “Delta-doping for enhanced III-V tunnel junction performance.” IEEE Journal of Photovoltaics 12, 976-981 (2022).
• Y. Sun, B. D. Li, R. D. Hool, S. Fan, M. Kim, M. L. Lee. “Improving the performance of GaInP solar cells through rapid thermal annealing and delta doping.” Solar Energy Materials and Solar Cells, 241 111725 (2022).
• W Choi, HC Huang, S Fan, P Mohseni, ML Lee, X Li. “Selective Area Heteroepitaxy of pin Junction GaP Nanopillar Arrays on Si (111) by MOCVD.” IEEE Journal of Quantum Electronics 58, 1-6 (2022).

2021

• P. Dhingra, P. Su, B. D. Li, R. D. Hool, A. J. Muhowski, M. Kim, D. Wasserman, J. Dallesasse, and M. L. Lee. “Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001).” Optica 8, no. 11 p. 1495-1500 (2021).
• RD Hool, Y Sun, BD Li, P Dhingra, RW Tham, S Fan, ML Lee, “Challenges of relaxed n-type GaP on Si and strategies to enable low threading dislocation density.” Journal of Applied Physics 130 (24), 243104 (2021).
• R. M. France, J. Buencuerpo, M. Bradsby, J. F. Geisz, Y. Sun, P. Dhingra, M. L. Lee, and M. A. Steiner. “Graded buffer Bragg reflectors with high reflectivity and transparency for metamorphic optoelectronics.” Journal of Applied Physics 129, no. 17 : 173102 (2021).
• Y. Sun, S. Fan, J. Faucher, R. D. Hool, B. D. Li, P. Dhingra, and M. L. Lee, “2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy,” Solar Energy Materials and Solar Cells, 219, p. 110774, (2021).

2020

• P. Dhingra, S. Fan, Y. Sun, R. D. Hool, B. Eng, M. L. Lee, “InP quantum dots for dislocation-tolerant, visible light emitters on Si,”(Editor’s Pick)Applied Physics Letters, 117, 118102 (2020).
  • Story in Semiconductor Today
• S. Fan, Z. J. Yu, R.D. Hool, P. Dhingra, W. Weigand, M. Kim, E. D. Ratta, B.D. Li, Y. Sun, Z. C. Holman and M. L. Lee, “Current-Matched III–V/Si Epitaxial Tandem Solar Cells with 25.0% Efficiency,” Cell Reports Physical Science, 1(9), p.100208 (2020). Media coverage:
  • Centered
  • PV Magazine
  • Illinois News Bureau
    • EurekAlert! AAAS, Science Daily, Techxplore, Global Spec, PVBuzz, Innovation Toronto, ScienceBlog, Environmental News Network, BioEngineer
• A. Briggs, L. Nordin, A. Muhowski, E. Simmons, P. Dhingra, M. Lee, V. Podolskiy, D. Wasserman, and S. Bank, “Enhanced room temperature infrared LEDs using monolithically integrated plasmonic materials,” Optica 7, 1355-1358 (2020).

• RD Hool, Y Chai, Y Sun, BC Eng, P Dhingra, S Fan, K Nay Yaung, and M. L. Lee. “Relaxed GaP on Si with low threading dislocation density.” Applied Physics Letters 116 (4), 042102, (2020).

2019

• S. Fan, Z. J. Yu, Y. Sun, W. Weigand, P. Dhingra, M. Kim, R. D. Hool, E. D. Ratta, Z. C. Holman, and M. L. Lee. “20%-efficient epitaxial GaAsP/Si tandem solar cells.” Solar Energy Materials and Solar Cells 202, p. 110144 (2019).
• E. S. Walker, S. Muschinske, C. J. Brennan, S. R. Na, T. Trivedi, S. D. March, Y. Sun, T. Yang, A. Yau, D. Jung, A. F. Briggs, E. M. Krivoy, M. L. Lee, K. M. Liechti, E. T. Yu, D. Akinwande, and S. R. Bank, “Composition-dependent structural transition in epitaxial Bi1-xSbx thin films on Si(111),” Phys. Rev. Materials, vol. 3, p. 064201 (2019).
• D. J. Ironside, A. M. Skipper, T. A. Leonard, M. Radulaski, T. Sarmiento, P. Dhingra, M. L. Lee, J. Vuckovic, and S. R. Bank, “High-quality GaAs planar coalescence over embedded dielectric microstructures using an all-MBE approach,” Crystal Growth & Design, vol. 19, pp. 3085-3091, (2019).
• S Fan, D Jung, Y Sun, BD Li, D Martín-Martín, ML Lee, “16.8%-Efficient n+/p GaAs Solar Cells on Si With High Short-Circuit Current Density,” IEEE Journal of Photovoltaics 9 (3), 660-665 (2019).
• C. Chen, F. Chen, X. Chen, B. Deng, B. Eng, D. Jung, Q. Guo, S. Yuan, K. Watanabe, T. Taniguchi, M. L. Lee, F. Xia, “Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus,” Nano Letters 19 (3), 1488-1493 (2019).
• D Jung, L Yu, S Dev, D Wasserman, ML Lee, “Design and growth of multi-functional InAsP metamorphic buffers for mid-infrared quantum well lasers on InP,” Journal of Applied Physics, 125 (8), 082537 (2019).
• K Mukherjee, M Vaisman, PG Callahan, ML Lee, “Anomalous tilting in InGaAs graded buffers from dislocation sources at wafer edges,” Journal of Crystal Growth,  512, 169-175 (2019).

2018

• Jonathan Grandidier, Alexander P Kirk, Mark L Osowski, Pawan K Gogna, Shizhao Fan, Minjoo L Lee, Margaret A Stevens, Phillip Jahelka, Giulia Tagliabue, Harry A Atwater, James A Cutts, “Low-Intensity High-Temperature (LIHT) Solar Cells for Venus Atmosphere,” IEEE Journal of Photovoltaics 8 (6), 1621-1626 (2018).
• Huandong Chen, Sung-Min Lee, Angelo Montenegro, Dongseok Kang, Boju Gai, Haneol Lim, Chayan Dutta, Wanting He, Minjoo Larry Lee, Alexander Benderskii, Jongseung Yoon, “Plasmonically Enhanced Spectral Upconversion for Improved Performance of GaAs Solar Cells under Nonconcentrated Solar Illumination,” ACS Photonics, 5 (11), 4289-4295 (2018).
• A.K. Rockwell, M. Ren, M. Woodson, A.H. Jones, S.D. March, Y. Tan, Y. Yuan, Y. Sun, R. Hool, S.J. Maddox, M.L. Lee, A.W. Ghosh, J.C. Campbell, and S.R. Bank, “Toward deterministic construction of low noise avalanche photodetector materials,” Applied Physics Letters, 113, 102106 (2018).
• E. M. Krivoy, A. P. Vasudev, S. Rahimi, R. A. Synowicki, K. M. McNicholas, D. J. Ironside, R. Salas, G. Kelp, D. Jung, H. P. Nair, G. Shvets, D. Akinwande, M. L. Lee, M. L. Brongersma, and S. R. Bank, “Rare-earth monopnictide alloys for tunable, epitaxial, designer plasmonics,” ACS Photonics, 5 (8), 3051-3056 (2018).
• Boju Gai, Yukun Sun, Huandong Chen, Minjoo Larry Lee*, and Jongseung Yoon*, “10-Fold-Stack Multilayer-Grown Nanomembrane GaAs Solar Cells.” ACS Photonics, 5 (7), 2786-2790 (2018).
• Perl, E. E., Simon, J., Friedman, D. J., Jain, N., Sharps, P., McPheeters, C., Y. Sun, M. L. Lee & Steiner, M. A.  “(Al) GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration.” IEEE Journal of Photovoltaics, 8(2), 640-645 (2018).
• Kornblum, L., Faucher, J., Morales-Acosta, M. D., Lee, M. L., Ahn, C. H., & Walker, F. J. “Oxide heterostructures for high density 2D electron gases on GaAs,” Journal of Applied Physics, 123(2), 025302 (2018).

2017

• D Jung, SR Bank, ML Lee, D Wasserman, “Next generation mid-infrared sources,” Journal of Optics, 19, 123001 (2017).
• R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, and S. R. Bank, “Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation,” APL Materials 5, 096106 (2017).
• M. L. Lee, “Materials science: Crystals aligned through graphene (News and Views),” Nature, 544, 301 (2017).
• M. Vaisman, S. Fan, K. Nay Yaung, E. Perl, D. Martín-Martín, Z. J. Yu, M. Leilaeioun, Z. C. Holman, and M. L. Lee, “15.3%-Efficient GaAsP solar cells on GaP/Si templates,” ACS Energy Letters, 2, 1911–1918 (2017).
• D. Jung, J. Faucher, S. Mukherjee, A. Akey, D.J. Ironside, M. Cabral, X. Sang, J. Lebeau, S.R. Bank, T. Buonassisi, O. Moutanabbir, ML Lee, “Highly tensile-strained Ge/InAlAs nanocomposites,” Nature Communications, 8, 14204 (2017).
• AY Liu, J Peters, X Huang, D Jung, J Norman, ML Lee, AC Gossard, JE Bowers, “Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si,” Optics Letters 42 (2), 338-341 (2017).
• B Gai, Y Sun, H Lim, H Chen, J Faucher, ML Lee, J Yoon, “Multilayer-Grown Ultrathin Nanostructured GaAs Solar Cells as a Cost-Competitive Materials Platform for III–V Photovoltaics,” ACS Nano, 11 (1), pp 992–999 (2017).
• CD Yerino, B Liang, DL Huffaker, PJ Simmonds, ML Lee, “Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111) A,(111) B, and (110),” Journal of Vacuum Science & Technology B, 35, 010801 (2017).
• L Kornblum, DP Fenning, J Faucher, J Hwang, A Boni, MG Han, MD Morales-Acosta, Y Zhu, EI Altman, ML Lee, CH Ahn, FJ Walker, Y Shao-Horn, “Solar hydrogen production using epitaxial SrTiO 3 on a GaAs photovoltaic,” Energy Environ. Sci., 10, 377-382 (2017).

2016

• D Jung, L Yu, S Dev, D Wasserman, ML Lee, “Room-temperature mid-infrared quantum well lasers on multi-functional metamorphic buffers,” Applied Physics Letters, 109 (21), 211101 (2016).
• J Faucher, Y Sun, D Jung, D Martin, T Masuda, ML Lee, “High-efficiency AlGaInP solar cells grown by molecular beam epitaxy,” Applied Physics Letters, 109 (17), 172105 (2016).
• T Masuda, J Faucher, ML Lee, “Molecular beam epitaxy growth of germanium junctions for multi-junction solar cell applications,” Journal of Physics D, Applied Physics, 49, 465105  (2016).
• E. S. Walker, S. R. Na, D. Jung, S. D. March, J.-S. Kim, T. Trivedi, W. Li, L. Tao, M. L. Lee, K. M. Liechti, D. Akinwande, and S. R. Bank “Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films,” Nano Letters, 16 (11), 6931-6938 (2016).
• S. Unsleber, M. Deppisch, C. M. Krammel, M. Vo, C. D. Yerino, P. J. Simmonds, M. L. Lee, P. M. Koenraad, C. Schneider, S. Höfling, “Bulk AlInAs on InP (111) as a novel material system for pure single photon emission,” Optics Express, 24, 23198-23206 (2016).
• K. Nay Yaung, M. Vaisman, J. Lang, and M. L. Lee, “GaAsP solar cells on GaP/Si with low threading dislocation density,” Applied Physics Letters, 109, 032107 (2016).
• T. Goh, J.-S. Huang, K. G. Yager, M. Y. Sfeir, C.-Y. Nam, X. Tong, L. M. Guard, P. R. Melvin, F. Antonio, B. G. Bartolome, M. L. Lee, N. Hazari, A. D. Taylor, “Quaternary Organic Solar Cells Enhanced by Cocrystalline Squaraines with Power Conversion Efficiencies >10%.” Advanced Energy Materials, 6 (21), 1600660 (2016).
• K. Nay Yaung, S. Kirnstoetter, J. Faucher, A. Gerger, A. Lochtefeld, A. Barnett, M. L. Lee, “Threading Dislocation Density Characterization in III-V Photovoltaic Materials by Electron Channeling Contrast Imaging,” Journal of Crystal Growth, 453, 65-70 (2016).
• R. Salas, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, S. R. Bank, “Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation.” Applied Physics Letters, 108(18):182102 (2016).
• Joseph Faucher, Taizo Masuda, Minjoo Larry Lee, “Initiation strategies for simultaneous control of antiphase domains and stacking faults in GaAs solar cells on Ge.” Journal of Vacuum Science & Technology B, 34(4):041203 (2016).
• EE Perl, J Simon, JF Geisz, ML Lee, DJ Friedman, MA Steiner, “Measurements and Modeling of III-V Solar Cells at High Temperatures up to 400°C,” IEEE Journal of Photovoltaics, 6 (5), 1345-1352 (2016).
• C. S. Schulze, X. Huang, C. Prohl, V. Füllert, S. Rybank, S. J. Maddox, S. D. March, S. R. Bank, M. L. Lee and A. Lenz, “Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate,” Applied Physics Letters, 108(14):143101 (2016).
• C. J. K. Richardson and M. L. Lee, “Metamorphic epitaxial materials,” MRS Bulletin, 41:193–198 (2016).
• M. Vaisman, K. Mukherjee, T. Masuda, K. Nay Yaung, E. A. Fitzgerald, M. L. Lee, “Direct- gap 2.1-2.2 eV AlInP solar cells on GaInAs/GaAs metamorphic buffers,” IEEE Journal of Photovoltaics, 6(2):571–577 (2016).
• M. Gould, S. Chakravarthi, I. R. Christen, N. Thomas, S. Dadgostar, Y. Song, M. L. Lee, F. Hatami, K.-M. C. Fu. “A Large-Scale GaP-on- Diamond Integrated Photonics Platform for NV Center-Based Quantum Information,” Journal of the Optical Society of America B, 33(3):B35–B42 (2016).

2015

• D. Jung, L. Yu, D. Wasserman, M. L. Lee, “Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers,” Journal of Applied Physics, 118, 183101 (2015).
• S.-M. Lee, A. Kwong, D. Jung, J. Faucher, R. Biswas, L. Shen, D. Kang, M. L. Lee*, J. Yoon*, “High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures,” ACS Nano, 9, 10356 (2015). *co-corresponding authors.
• T. Goh, J.-S. Huang, B. Bartolome, M. Sfeir, M. Vaisman, M. L. Lee, A. D. Taylor, “Panchromatic Polymer-polymer Ternary Solar Cells Enhanced by Förster Resonance Energy Transfer and Solvent Annealing,”  Journal of Materials Chemistry A., 3, 18611 (2015).
• X. Li, B. Deng, X. Wang, S. Chen, M. Vaisman, S. Karato, G. Pan, M. L. Lee, J. Cha, H. Wang, F. Xia “Synthesis of thin-film black phosphorus on a flexible substrate,” 2D Materials, 2, 031002  (2015).
• T. Masuda, S. Tomasulo, J. R. Lang, M. L. Lee “Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy,” Journal of Applied Physics, 117, 094504 (2015).
• M. Vaisman, S. Tomasulo, T. Masuda, J. R. Lang, J. Faucher, M. L. Lee “Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy,” Applied Physics Letters, 106, 063903 (2015).
• R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, E. M. Krivoy, D. Jung, M. L. Lee, S. R. Bank “Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation,” Applied Physics Letters, 106, 081103 (2015).
• B. Redding, A. Cerjan, X. Huang, M. L. Lee, A. D. Stone, M. A. Choma, H. Cao “Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging,” PNAS, 112, 1304-1309 (2015).
• T. Goh, J-S Huang,  E. A. Bielinski, B. A. Thompson, S. Tomasulo, M. L. Lee, M. Y. Sfeir, N. Hazari & A. D. Taylor “Coevaporated Bisquaraine Inverted Solar Cells: Enhancement Due to Energy Transfer and Open Circuit Voltage Control,” ACS Photonics, 2, pp 86–95 (2015).
  

2014

• C. D. Yerino, P. J. Simmonds, B. Liang, D. Jung, C. Schneider, S. Unsleber, M. Vo, D. L. Huffaker, S. Höfling, M. Kamp and M. L. Lee “Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting,” Applied Physics Letters, 105, 251901 (2014).
• V.D. Dasika, E.M. Krivoy, H.P. Nair, S.J. Maddox, K.W. Park, D. Jung, M.L. Lee, E.T. Yu, and S.R. Bank, “Increased InAs Quantum Dot Size and Density using Bismuth as a Surfactant,” Applied Physics Letters, 105,  253104 (2014).
• J. Shen, Y. Song, M. L. Lee and J. J. Cha, “Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems,” Nanotechnology, 25, 465702 (2014).
• X. Huang, Y. Song, T. Masuda, D. Jung, M. L. Lee, “InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001),” Electronics Letters, 50, 1226 (2014).
• L. Yu, D. Jung, S. Law, J. Shen, J. J. Cha, M. L. Lee and D. Wasserman, “Controlling quantum dot energies using submonolayer bandstructure engineering,” Applied Physics Letters, 105, 081103 (2014).
• C. D. Yerino, P. J. Simmonds, B. Liang, V. G. Dorogan, M. E. Ware, Y. I. Mazur, D. Jung, D. L. Huffaker, G. J. Salamo, and M. L. Lee, “Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap,” Applied Physics Letters, 105, 071912 (2014).
• K. Nay Yaung, S. Tomasulo, J. R. Lang, J. Faucher, and M. L. Lee, “Defect selective etching of GaAs_yP_1−y photovoltaic materials,” Journal of Crystal Growth, 404, 140-145 (2014).
• N. Thomas, R. J. Barbour, Y. Song, M. L. Lee, and K.-M. C. Fu, “Waveguide-integrated single-crystalline GaP resonators on diamond,” Optics Express, 22, Issue 11, pp. 13555-13564 (2014).
• S. Tomasulo, K. Nay Yaung, J. Faucher, M. Vaisman and M. L. Lee, “Metamorphic 2.1-2.2 eV InGaP solar cells on GaP substrates,” Applied Physics Letters, 104, 173903 (2014).

2013

• J. Faucher, A. Gerger, S. Tomasulo, C. Ebert, A. Lochtefeld, A. Barnett, M. L. Lee, “Single-junction GaAsP solar cells grown on SiGe graded buffers on Si,” Applied Physics Letters, 103, 191901, (2013).
• Y. Song and M. L. Lee, “InGaAs/GaP quantum dot light-emitting diodes on Si,” Applied Physics Letters, 103, 141906, (2013).
• J. R. Lang, J. Faucher, S. Tomasulo, K. Nay Yaung, M. L. Lee, “Comparison of GaAsP solar cells on GaP and GaP/Si,” Applied Physics Letters, 103, 092102, (2013).
• P. J. Simmonds*, C. D. Yerino*, M. Sun, B. Liang, D. L. Huffaker, V. G. Dorogan, Y. I. Mazur, G. J. Salamo, and M. L. Lee, “Tuning quantum dot luminescence below the bulk bandgap using tensile strain,” ACS Nano, vol. 7, 5017-5023 (2013). * denotes these authors contributed equally.
• J-S Huang, T. Goh, X. Li, M. Y. Sfeir, E. A. Bielinski, S. Tomasulo, M. L. Lee, N. Hazari & A. D. Taylor, “Polymer bulk heterojunction solar cells employing Förster resonance energy transfer,” Nature Photonics, 7, 479–485 (2013).

2012

• D. Jung, Y. Song, L. Yu, D. Wasserman, and M. L. Lee, “2.8 μm emission from type-I quantum wells grown on InAs_xP_1−x/InP metamorphic graded buffers,” Applied Physics Letters, 101, 251107 (2012).
• J. C. Shin, P. K. Mohseni, K. J. Yu, S. Tomasulo, K. H. Montgomery, M. L. Lee, J. A. Rogers, and X. Li, “Heterogeneous Integration of InGaAs Nanowires on the Rear Surface of Si Solar Cells for Efficiency Enhancement,” ACS Nano (2012).
• P. J. Simmonds and M. L. Lee, “Tensile-strained growth on low-index GaAs,” Journal of Applied Physics, vol. 112, 054313 (2012)
• S. Tomasulo, K. Nay Yaung, J. Simon, and M. L. Lee, “GaAsP solar cells on GaP substrates by molecular beam epitaxy,” Applied Physics Letters, 101, 033911 (2012).
• Y. Song and M. L. Lee, “Room temperature electroluminescence from light-emitting diodes based on In_0.5Ga_0.5As/GaP self-assembled quantum dots,” Applied Physics Letters, 100, 251904 (2012).
• G. F. Moore, S. J. Kozezny, H. Song, R. L. Milot, J. D. Blakemore, M. L. Lee, V. S. Batista, C. A. Schmuttenmaer, R. H. Crabtree, G. W. Brudvig, “Bioinspired High-Potential Porphyrin Photoanodes,”The Journal of Physical Chemistry C, vol. 116, 4892-4902 (2012)
• S. Tomasulo, K. N. Yaung, and M. L. Lee, “Metamorphic GaAsP and InGaP Solar Cells on GaAs,” IEEE Journal of Photovoltaics, vol. 2, 56-61 (2012)
• K. Rivoire, S. Buckley, Y. Song, M. L. Lee, and J. Vuckovic, “Photoluminescence from In_0.5Ga_0.5As/GaP quantum dots coupled to photonic crystal cavities,” Physical Review B, 85, 045319, (2012).

2011

• P. J. Simmonds, M. L. Lee, “Self-assembly on (111)-oriented III-V surfaces,” Applied Physics Letters, vol. 99, 123111 (2011). Also selected for Virtual Journal of Nanoscale Science and Technology.
• C. D. Yerino, Y. Zhang, B. Leung, M. L. Lee, T-C. Hsu, C-K. Wang, W-C. Peng, and J. Han, “Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes,”Applied Physics Letters, vol. 98, 251910 (2011).
• S. Tomasulo, J. Simon, P. J. Simmonds, J. Biagiotti, and M. L. Lee, “Molecular beam epitaxy of metamorphic In_yGa_1−yP solar cells on mixed anion GaAs_xP_1−x/GaAs graded buffers,” J. Vac. Sci. Technol. B, vol. 29, 03C118 (2011)
• P. J. Simmonds, J. Simon, J. M. Woodall, and M. L. Lee, “Molecular beam epitaxy approach to the graphitization of GaAs(100) surfaces,” J. Vac. Sci. Technol. B, vol. 29, 03C103 (2011)
• J. Simon, P. J. Simmonds, J. M. Woodall, and M. L. Lee, “Graphitized carbon on GaAs(100) substrates,” Applied Physics Letters, vol. 98, 073113 (2011)
• J. Simon, S. Tomasulo, P. J. Simmonds, M. J. Romero, and M. L. Lee, “Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells,” Journal of Applied Physics, vol. 109, 013708 (2011)
• Y. Zhang, Q. Sun, B. Leung, J. Simon, M. L. Lee, and J. Han, “The fabrication of large-area, free-standing GaN by a novel nanoetching process,” Nanotechnology, vol. 22, pp. 045603+ (2011)

2010

• Y. Song, P. J. Simmonds, and M. L. Lee, “Self-assembled In_0.5Ga_0.5As quantum dots on GaP,” Applied Physics Letters, vol. 97, 223110 (2010) Also selected for Virtual Journal of Nanoscale Science and Technology.
• P. J. Simmonds and M. L. Lee, “Tensile strained island growth at step-edges on GaAs(110),” Applied Physics Letters, vol. 97, 153101+ (2010)
• M. L. Lee, G. Dezsi, and R. Venkatasubramanian, “Analysis of SiGe/Si quantum dot superlattices grown by low-pressure chemical vapor deposition for thin solar cells,” Thin Solid Films, vol. 518, pp. S76–S79 (2010)

2008

• Y. Bai, K. E. Lee, C. Cheng, M. L. Lee, and E. A. Fitzgerald, “Growth of highly tensile-strained Ge on relaxed In_xGa_1−xAs by metal-organic chemical vapor deposition,” Journal of Applied Physics, vol. 104, 084518 (2008)
• M. L. Lee and R. Venkatasubramanian, “Effect of nanodot areal density and period on thermal conductivity in SiGe/Si nanodot superlattices,” Applied Physics Letters, vol. 92, 053112 (2008). Also selected for Virtual Journal of Nanoscale Science and Technology.