Our laboratories are located in the Nick Holonyak, Jr. Micro and Nano Technology Laboratory (HMNTL)
- MBE growth labs (What is MBE?)
- Veeco Mod Gen II MBE system for growth of III-AsPSb materials
- Substrate size up to 4″
- Group III sources: Al, Ga, and In SUMO cells
- Group V sources: As, P, and Sb valved cracker cells
- Doping sources: Si, Be, GaTe, and CBr4
- Example devices grown in this chamber:
- Diode lasers (emission at 680-2700 nm): InGaP, InGaAs, and InAs QWs, InAs and InP QDs
- Quantum cascade lasers emitting at 4.5 µm based on strain-balanced InGaAs/InAlAs grown on InP
- Photonic crystal surface-emitting lasers (PCSELs) at 1.5 µm
- Heterojunction phototransistors for ultrasensitive detection at 1.0-1.7 µm)
- Solar cells: AlGaInP, GaInP, GaAs, GaAsP, InGaAs
- Coming in 2025: Veeco Gen XCel MBE system for growth of III-N materials
- Substrate size up to 4″
- Veeco N plasma source
- Group III sources: Al, Ga, and In SUMO cells
- Doping sources: Mg, Si, Be
- High-T effusion cell for Sc
- E-beam source for B, Nb, Ti, Ta, etc.
- Veeco Mod Gen II MBE system for growth of III-AsPSb materials
- Characterization lab
- Laser mounting and testing
- Laser diode test station with pulsed and CW current sources, power meters, optical spectrum analyzer, and thermoelectric stage.
- Thinning, grinding, and polishing station
- Strip heater for laser die mounting
- Solar cell, laser power converter, and photodetector testing
- External/internal quantum efficiency + spectral reflectance test station (300-1700 nm)
- Solar simulator for lighted I-V and efficiency characterization
- Dark I-V, Jsc-Voc, and transfer length measurement (TLM)
- Linkam variable-T stage for device testing from LN2 temperature up to 600°C
- General-purpose equipment
- Visible, near-infrared, and mid-infrared photoluminescence/electroluminescence
- Probe stations with source-measure units
- Electroplating setup (indium, nickel, gold)
- Tube furnace for annealing and aging of devices
- Laser mounting and testing
Researchers in Lee’s group make extensive use of shared facilities at the University of Illinois Urbana-Champaign
- Holonyak Micro & Nano Technology Laboratory (HMNTL), in addition to extensive cleanrooms for device fabrication, HMNTL hosts an Aixtron metalorganic chemical vapor deposition (MOCVD) system for III-N semiconductor growth (up to 4″ wafers) and Elionix 150 kV e-beam lithography system for sub-10 nm patterning (up to 6″ wafers)
- Materials Research Lab (MRL)
- Center for Microanalysis of Materials– state-of-the-art facilities for characterization by high-resolution x-ray diffraction, scanning/transmission electron microscopy (S/TEM), AFM, SEM, etc.
- SEMs are equipped for cathodoluminescence (CL), electron beam-induced current (EBIC), and electron channeling contrast imaging (ECCI).
- Laser and Spectroscopy Facility– extensive instrumentation for steady-state and time-resolved luminescence, variable-angle spectroscopic ellipsometry, specular/diffuse reflectance, time-domain thermo-reflectance, FTIR, etc.
- Micro/Nanofabrication Facility– complements HMNTL with additional facilities for device fabrication, including ALD, sputtering, ion milling, maskless aligner, etc.
- Center for Microanalysis of Materials– state-of-the-art facilities for characterization by high-resolution x-ray diffraction, scanning/transmission electron microscopy (S/TEM), AFM, SEM, etc.
- Beckman Institute
- Microscopy Suite (optical microscopes, micro-Raman, micro-PL, SEM, TEM)
- Micro-Nano-Mechanical Systems Cleanroom Laboratory