Gallium Nitride is a promising compound semiconductor for photonic applications.
Related News + Publications
- Leah Presents Integration Work at CS International
At the 2023 CS International Conference in Brussels, Belgium, Leah gave an invited talk on her work making heterogeneously integrated VCSELs on silicon. These VCSELs integrated via epitaxial transfer have improved thermal performances compared to non-integrated counterparts. - Optical Transitions and Magnetism in Mn-Implanted Gallium Nitride for Three-Level Magnetooptic DevicesA method of preparing passive materials suitable for magnetooptic interactions is shown using manganese implantation into gallium nitride (GaN) epitaxial layers, which establishes both dilute ferromagnetism and a three-level optical system with persistence to over 300 K. A sweep of thermal anneal parameters for a high implant dose into Mg-doped p-type GaN films is presented,… Read more: Optical Transitions and Magnetism in Mn-Implanted Gallium Nitride for Three-Level Magnetooptic Devices
- Modeling Photocurrent Spectra of High-Indium-Content InN/InGaN Disk-in-Wire PhotodiodesThis work reports comprehensive modeling of photocurrent spectra generated by an InGaN/InGaN disk-in-wire photodiode based on the effective bond-orbital model. The photocurrent spectra contributed by both single-photon absorption and two-photon absorption are calculated. The physical mechanisms for the observed prominent peaks are identified and investigated. IEEE IPC Article Link