Category: Mode + Polarization Control

Optical Transverse-Mode Control and Polarization Control in VCSELs

Standing Wave Engineering for Mode Control in Single-Mode Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

Posted on by jdallesa@illinois.edu

Single transverse mode operation in vertical-cavity surface-emitting lasers (VCSELs) is desired over multimode operation in a number of applications. This work presents a method of achieving single-mode operation by depositing an annulus-shaped semiconductor coating atop an 850 nm oxide-confined VCSEL to modify the standing wave of the optical field in the laser cavity. The devices are benchmarked for singlemode performance as well as optical output power via optical spectra and light-current-voltage (LIV) measurements respectively.

CS Mantech Article Link

Prof. Dallesasse Interviewed About VCSEL Work

Posted on by Leah Espenhahn

“VCSELs are a type of device that are seeing broad use in a growing number of applications,” said Dallesasse. “They are being looked at for use in self-driving cars that utilize LIDAR, and are already extensively used in the fiber optic networks of large data centers.”

“We’re specifically looking at ways of improving the optical beam that comes out of the VCSEL,” said Dallesasse. “When you have a device like a VCSEL, the optical modes can be thought of as the light patterns on the surface. In order for you to utilize patterns, it’s desirable to be able to control those light patterns.”

UIUC ECE Article Link

Patrick Su, Fu-Chen Hsiao, Tommy O’Brien, and Professor Dallesasse awarded CS MANTECH 2018 Best Student Paper Award

Posted on by psu8@illinois.edu

The Advanced Semiconductor Device and Integration Group was awarded the CS MANTECH 2018 Best Student Paper Award by Patrick Su, Fu-Chen (Alex) Hsiao, Tommy O’Brien and Professor Dallesasse on Controlling Impurity-Induced Disordering via Mask Strain for High-Performance VCSELs.

CS MANTECH 2018 Best Student Paper Award Link Here!

Wafer-Scale Method of Controlling Impurity-Induced Disordering for Optical Mode Engineering in High-Performance VCSELs

Posted on by jdallesa@illinois.edu

The Advanced Semiconductor Device and Integration Group is proud to share a recent publication by Patrick Su, Fu-Chen (Alex) Hsiao, Tommy O’Brien and Professor Dallesasse on demonstrating a novel method of controlling impurity-induce disordering apertures via Mask Strain that can be applied to wafer-scale manufacturing of high-power single-mode VCSELs.

IEEE Transactions in Semiconductor Manufacturing Article Here!

 

Patrick Su and Fu-Chen (Alex) Hsiao are awarded the II-VI Foundation Block-Gift Award

Posted on by psu8@illinois.edu

Patrick Su and Fu-Chen (Alex) Hsiao were awarded the II-VI Foundation Block-Gift award aiming to develop the professional knowledge and experience of Ph.D. candidates. This project is focused on developing single-mode high-power Vertical-Cavity Surface-Emitting Lasers (VCSELs). They are grateful for the support and opportunity provided by the II-VI Foundation.

Mode Behavior of VCSELs with Impurity-Induced Disordering by Tommy, Ben, Sam, and Professor Dallesasse

Posted on by jdallesa@illinois.edu

The Advanced Semiconductor Device and Integration Group is proud to share a recent publication by Tommy O’Brien, Ben Kesler, Sam Almulla and Professor Dallesasse exploring the modal behavior of oxide-confined vertical-cavity surface-emitting lasers (VCSELs) with varying emission apertures defined by impurity-induced disordering (IID) via closed ampoule zinc diffusion.

Click Here for Full Article in IEEE Photonic Technology Letters

This work explores the modal behavior of oxide-confined vertical-cavity surface-emitting lasers (VCSELs) with varying emission apertures defined by impurity-induced disordering (IID) via closed ampoule zinc diffusion. A 1-D plane wave propagation method is used to calculate the mirror loss as a function of IID strength and depth. The devices are fabricated with masked areas ranging from approximately 70-110% of the oxide aperture defining an unmodified emission aperture designed to overlap mainly with the fundamental mode. An analysis of the transverse mode lasing characteristics and mode-dependent thermal characteristics demonstrates a decrease in thermal performance associated with the increasing overlap between the IID ring and supported optical modes of the VCSEL cavity. A single-mode output power of 1.6 mW with over 30 dBm SMSR is achieved from a 3.0 μm device with an IID-defined output aperture of approximately 1.3 μm. The optimal IID emission aperture to oxide aperture ratio for maximizing the single-fundamental-mode output power is experimentally measured.

Facilitating Single-Transverse-Mode Lasing in VCSELs via Patterned Dielectric Anti-Phase Filters by Ben, Tommy, Guan-Lin, and Professor Dallesasse

Posted on by jdallesa@illinois.edu

SINGLE-TRANSVERSE-MODE VCSELS VIA PATTERNED DIELECTRIC ANTI-PHASE FILTERS

A novel method to achieve single-fundamental-mode lasing and higher order mode suppresion using a multi-layer, patterned, dielectric anti-phase filter is employed on the top of oxide-confined vertical-cavity surface-emtting lasers (VCSELs).

Click here for Full Article in IEEE Photonics Technology Letters