Prof. John Dallesasse shares his insights about the semiconductor shortage’s causes and future.

Prof. John Dallesasse shares his insights about the semiconductor shortage’s causes and future.
“VCSELs are a type of device that are seeing broad use in a growing number of applications,” said Dallesasse. “They are being looked at for use in self-driving cars that utilize LIDAR, and are already extensively used in the fiber optic networks of large data centers.”
“We’re specifically looking at ways of improving the optical beam that comes out of the VCSEL,” said Dallesasse. “When you have a device like a VCSEL, the optical modes can be thought of as the light patterns on the surface. In order for you to utilize patterns, it’s desirable to be able to control those light patterns.”
The Advanced Semiconductor Device and Integration Group was awarded the CS MANTECH 2018 Best Student Paper Award by Patrick Su, Fu-Chen (Alex) Hsiao, Tommy O’Brien and Professor Dallesasse on Controlling Impurity-Induced Disordering via Mask Strain for High-Performance VCSELs.
CS MANTECH 2018 Best Student Paper Award Link Here!
The Advanced Semiconductor Device and Integration Group is proud to share a recent publication by Patrick Su, Fu-Chen (Alex) Hsiao, Tommy O’Brien and Professor Dallesasse on demonstrating a novel method of controlling impurity-induce disordering apertures via Mask Strain that can be applied to wafer-scale manufacturing of high-power single-mode VCSELs.
IEEE Transactions in Semiconductor Manufacturing Article Here!
Patrick Su and Fu-Chen (Alex) Hsiao were awarded the II-VI Foundation Block-Gift award aiming to develop the professional knowledge and experience of Ph.D. candidates. This project is focused on developing single-mode high-power Vertical-Cavity Surface-Emitting Lasers (VCSELs). They are grateful for the support and opportunity provided by the II-VI Foundation.
At the International Compound Semiconductor Manufacturing Technology (CS MANTECH) 2018, John Carlson and Patrick Su were honored with the Best Poster Award on a method of integrating III-V semiconductor material suitable for lasers onto silicon which is used for CMOS electronics. John has demonstrated a novel demonstration of epitaxial bonding and transfer for heterogeneous integration of electron-photonic circuitry.
More details can be found in this link.
The Advanced Semiconductor Device and Integration Group is proud to share a recent publication by Kanuo Chen, Fu-Chen (Alex) Hsiao, Brittany Joy, and Professor Dallesasse on demonstrating the ability to control radiative base recombination in a quantum-cascade light emitting transistor that shows performance benefits of a transistor-injected QCL over conventional QCL devices.
Applied Physics B Article Link
The Advanced Semiconductor Device and Integration Group congratulates Kanuo Chen for receiving her Doctorate of Philosophy in Electrical Engineering awarded for her work on the Transistor-Injected Quantum Cascade Laser (TI-QCL). We wish her the best of luck as she continues her career at Apple Incorporated in Cupertino, California.
The Advanced Semiconductor Device and Integration Group congratulates Tommy O’Brien for receiving his Doctorate of Philosophy in Electrical Engineering awarded for his work on Impurity Induced Disordering (IID) in single-mode VCSELs. We wish him the best of luck as he continues his career at Intel Corporation in Hillsboro, Oregon.
Light traveling along razor thin fiber optic cables routinely carries phone calls, Internet traffic, streaming video, and information stored in massive data centers at lightning speed across various distances—from thousands of miles to several meters. However, utilizing light to transmit information very short distances such as between/on semiconductor chips, has been limited by the lack of a circuit element that handles both light (photons) and electrons effectively.
In August, the National Science Foundation in conjunction with the Semiconductor Research Corporation awarded a team of engineering researchers from the University of Illinois and the University of Chicago $2.5 million to develop a chip-level photonic device technology for transporting and processing information at the chip level. The researchers, led by ECE Illinois Associate Professor John Dallesasse, will use the transistor laser as the building block for high-speed optical links and electronic-photonic digital logic circuits, enabling faster and more energy efficient chip-to-chip communications and signal/information processing.
Read full article here: Professor Dallesasse leads NSF E2CDA Center